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RN4990FE,LF(CT

Categories Bipolar Transistor Arrays, Pre-Biased
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max): 100mA
Product Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition: 250MHz, 200MHz
Mounting Type: Surface Mount
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series: -
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Supplier Device Package: ES6
Resistor - Base (R1): 4.7kOhms
Mfr: Toshiba Semiconductor and Storage
Resistor - Emitter Base (R2): -
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 100mW
Package / Case: SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Base Product Number: RN4990
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RN4990FE,LF(CT

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
Product Tags:

TL16C450FNR

  

DAF 1343254

  

GD75232DBR

  
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